document number: 94663 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 tandem insulated sot-227 power module hyperfast rectifier, 60 a UFH60GA60P vishay semiconductors features ? two fully independent diodes ? ceramic fully insulated package (v isol = 2500 v ac ) ? hyperfast reverse recovery ? optimized for power conver sion: welding and industrial smps applications ? industry standard outline ? plug-in compatible with other sot-227 packages ? easy to assemble ? direct mounting to heatsink ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the UFH60GA60P insulated modules integrate two state of the art vishay hyperfast recovery rectifiers in the compact, industry standard sot-227 pack age. the planar structure of the diodes, and the platinum doping life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness, and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be a predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, and dc-to-dc converters. thei r extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. product summary v r 600 v i f(av) per module at t c = 126 c 60 a t rr 39 ns s ot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 600 v continuous forward current per diode i f t c = 85 c 56 a single pulse forwar d current per diode i fsm t c = 25 c 200 maximum power dissip ation per module p d t c = 85 c 230 w rms isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction and storage temperatures t j , t stg - 55 to 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94663 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 UFH60GA60P vishay semiconductors tandem insulated sot-227 power module hyperfast rectifier, 60 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v forward voltage v fm i f = 30 a - 2.08 3.8 i f = 60 a - 2.36 4.78 i f = 30 a t j = 125 c - 1.79 1.92 i f = 60 a - 2.1 2.42 reverse leakage current i rm v r = v r rated - 0.03 75 a t j = 175 c, v r = v r rated - 0.1 1.0 ma junction capacitance c t v r = 600 v - 33 - pf dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -3980 ns t j = 125 c - 66 110 peak recovery current i rrm t j = 25 c - 3 7 a t j = 125 c - 7 11 reverse recovery charge q rr t j = 25 c - 58 280 nc t j = 125 c - 235 605 thermal - mechanical specifications parameter symbol test conditions min. typ. max. units junction to case, single leg conducting r thjc - - 0.78 c/w junction to case, both leg conducting - - 0.39 case to heatsink per module r thcs flat, greased surface - 0.05 - weight -30- g mounting torque - 1.3 - n m
document number: 94663 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 UFH60GA60P tandem insulated sot-227 power module hyperfast rectifier, 60 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics (per diode) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) i f - instantaneous forward current (a) v f - forward voltage drop (v) 023.545 13 1.5 0.5 2.5 4.5 5.5 1 1000 100 10 94663_01 t j = 175 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 100 200 400 500 300 600 0.001 0.01 0.1 1 10 100 1000 94663_02 t j = 125 c t j = 175 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 10 100 1000 10 1000 100 94663_03 t j = 25 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 94663_04
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94663 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 UFH60GA60P vishay semiconductors tandem insulated sot-227 power module hyperfast rectifier, 60 a fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt fig. 9 - typical stored current vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r allowable case temperature (c) i f(av) - average forward current (a) 40 20 60 80 100 0 80 160 180 0 40 60 120 140 100 20 94663_05 square wave (d = 0.50) rated v r applied see note (1) dc average power loss (w) i f(av) - average forward current (a) 40 30 20 10 50 0 80 90 0 40 60 20 70 30 50 10 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rms limit dc 94663_06 t rr (ns) di f /dt (a/s) 100 1000 0 90 30 50 70 80 20 10 40 60 i f = 30 a v r = 200 v t j = 25 c t j = 125 c 94663_07 q rr (nc) di f /dt (a/s) 100 1000 0 500 450 200 300 400 100 150 250 350 50 i f = 30 a v r = 200 v t j = 25 c t j = 125 c 94663_08 i rr (a) di f /dt (a/s) 100 1000 0 20 10 15 5 i f = 30 a v r = 200 v t j = 25 c t j = 125 c 94663_09
document number: 94663 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 UFH60GA60P tandem insulated sot-227 power module hyperfast rectifier, 60 a vishay semiconductors fig. 10 - reverse recovery parameter test circuit fig. 11 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94663 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 UFH60GA60P vishay semiconductors tandem insulated sot-227 power module hyperfast rectifier, 60 a ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - ultrafast rectifier 2 - hyperfast rectifier 3 - current rating (60 = 60 a) 4 - circuit configuration (2 separate diodes, tandem configuration) 5 - package indicator (sot-227 standard isolated base) 6 - voltage rating (60 = 600 v) 7 - p = lead (pb)-free device code 5 13 24 67 uf h 60 g a 60 p 1 4 2 3
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